| Item |
SC |
WG |
Ref No. / date |
Title (SCA = Surface chemical analysis) |
Proposer |
| 1 |
- |
2 |
14706 / 2000 |
SCA - Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy [SIA 2002; 33: 369]. |
JISC |
| 2 |
- |
2 |
17331 / 2004 |
SCA - Chemical methods for the collection of elements from the surface of silicon-wafer working reference materials and their determination by total-reflection X-ray fluorescence (TXRF) spectroscopy [SIA 2005; 37: 522]. |
JISC |
| 3 |
1 |
2 |
18115 / 2001 |
SCA - Vocabulary [SIA 2001; 31: 1048]. |
BSI |
| 4 |
1 |
2 |
18115-Amd 1 / 2006 |
SCA - Vocabulary/Amendment 1 |
BSI |
| 5 |
1 |
2 |
18115-Amd 2 / 2006 |
SCA - Vocabulary/Amendment 2 |
BSI |
| 6 |
2 |
1 |
18116 / 2005 |
SCA - Guidelines for preparation and mounting of specimens for analysis |
ANSI |
| 7 |
2 |
1 |
18117 / 2009 |
SCA - Handling of specimens prior to analysis |
ANSI |
| 8 |
2 |
2 |
16268 / 2009 (TR) |
SCA - Proposed procedure for certifying the retained areic dose in a working reference material produced by ion implantation |
|
| 9 |
3 |
1 |
14975 / 2000 |
SCA - Information formats [SIA 2002; 33: 367]. |
JISC |
| 10 |
3 |
1 |
14976 / 1998 |
SCA - Data transfer format [SIA 1999; 27: 693]. |
BSI |
| 11 |
3 |
1 |
22048 / 2004 |
SCA - Information format for static secondary-ion mass spectrometry [SIA 2004; 36: 642]. |
BSI |
| 12 |
4 |
1 |
15969 / 2001 (TR)
|
SCA - Depth profiling - Measurement of sputtered depth [SIA 2002; 33: 453]. |
JISC |
| 13 |
4 |
1 |
22335 / 2007 (TR) |
SCA - Depth profiling - Measurement of sputtering rate: mesh-replica method using a mechanical stylus profilometer |
JISC |
| 14 |
4 |
2 |
14606 / 2000 |
SCA - Sputter depth profiling - Optimization using layered systems as reference materials [SIA 2002; 33: 365]. |
JISC |
| 15 |
5 |
1 |
18118 / 2004 |
SCA - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Guide to the use of experimentally determined relative sensitivity factors for the quantitative analysis of homogeneous materials [SIA 2006; 38: 178]. |
JISC |
| 16 |
5 |
1 |
18392 / 2005 (TR) |
SCA - X-ray photoelectron spectroscopy - Procedures for determining backgrounds [SIA 2006; 38: 1173] |
MSZT |
| 17 |
5 |
1 |
18394 / 2006 (TR) |
SCA - Auger electron spectroscopy - Derivation of chemical information |
MSZT |
| 18 |
5 |
1 |
18516 / 2006 |
SCA - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution |
ANSI |
| 19 |
5 |
1 |
19318 / 2004 |
SCA - X-ray photoelectron spectroscopy - Reporting of methods used for charge control and charge correction [SIA 2005; 37: 524]. |
ANSI |
| 20 |
5 |
1 |
19319 / 2003 (TR) |
SCA - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Determination of lateral resolution, analysis area, and sample area viewed by the analyser [SIA 2004; 36: 666]. |
ANSI |
| 21 |
5 |
1 |
20903 / 2006 |
SCA - Auger electron spectroscopy and X-ray photoelectron spectroscopy - Methods used to determine peak intensities and information required when reporting results |
BSI |
| 22 |
6 |
1 |
14237 / 2000 |
SCA - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials [SIA 2002; 33: 361]. |
JISC |
| 23 |
6 |
1 |
17560 / 2002 |
SCA - Secondary-ion mass spectrometry - Method for depth profiling of boron in silicon [SIA 2005; 37: 90]. |
JISC |
| 24 |
6 |
2 |
18114 / 2003 |
SCA - Secondary-ion mass spectrometry - Determination of relative sensitivity factors from ion-implanted reference materials |
ANSI |
| 25 |
6 |
3 |
20341 / 2003 |
SCA - Secondary-ion mass spectrometry - Method for estimating depth resolution parameters with multiple delta-layer reference materials |
KATS |
| 26 |
6 |
3 |
23812 / 2009 |
SCA - Method for depth calibration for silicon using multiple delta-layer reference materials [SIA 2005; 37: 646]. |
JISC |
| 27 |
6 |
4 |
23830 / 2008 |
SCA - Secondary-ion mass spectrometry -- Repeatability and constancy of the relative-intensity scale in static secondary-ion mass spectrometry |
BSI |
| 28 |
7 |
1 |
15470 / 2004 |
SCA - X-ray photoelectron spectroscopy - Description of selected instrumental performance parameters |
BSI |
| 29 |
7 |
1 |
15471 / 2004 |
SCA - Auger electron spectroscopy - Description of selected instrumental performance parameters |
BSI |
| 30 |
7 |
2 |
15472 / 2001 |
SCA - X-ray photoelectron spectrometers - Calibration of energy scales [SIA 2001; 31: 721]. |
BSI |
| 31 |
7 |
2 |
15472 Amd 1 / 2007 |
SCA - X-ray photoelectron spectrometers - Calibration of energy scales |
BSI |
| 32 |
7 |
2 |
17973 / 2002 |
SCA - Medium-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis [SIA 2003; 35: 329]. |
BSI |
| 33 |
7 |
2 |
17974 / 2002 |
SCA - High-resolution Auger electron spectrometers - Calibration of energy scales for elemental analysis [SIA 2003; 35: 327]. |
BSI |
| 34 |
7 |
2 |
21270 / 2004 |
SCA - X-ray photoelectron and Auger electron spectrometers - Linearity of intensity scale [SIA 2004; 36: 645]. |
BSI |
| 35 |
7 |
2 |
24236 / 2005 |
SCA - Auger electron spectroscopy - Repeatability and constancy of intensity scale |
BSI |
| 36 |
7 |
2 |
24237 / 2005 |
SCA - X-ray photoelectron spectroscopy - Repeatability and constancy of intensity scale |
BSI |
| 37 |
8 |
1 |
14707 / 2000 |
SCA - Glow discharge optical emission spectrometry (GD-OES) - Introduction to use [SIA 2002; 33: 363]. |
JISC |
| 38 |
8 |
1 |
15338 / 2009 (TS) |
SCA - Glow discharge mass spectrometry (GD-MS) - Introduction to use |
ANSI |
| 39 |
8 |
1 |
16962 / 2005 |
SCA - Analysis of zinc- and/or aluminium-based metallic coatings by glow-discharge optical-emission spectrometry |
SIS |
Surface Analysis 